2N2219A 数据手册
其他文档
2N22(18-22) Datasheet 5 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Microchip Tech 2N2219A
- Transistor Type: NPN
- Operating Temperature: -55°C~+200°C@(Tj)
- Collector Current (Ic): 800mA
- Power Dissipation (Pd): 800mW
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
- Collector Cut-Off Current (Icbo): 10nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@500mA,50mA
- Package: TO-39
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 800mW
- Frequency - Transition: 250MHz
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
- Base Part Number: 2N22